Search results for " Responsivity"

Responsivity measurements of silicon carbide Schottky photodiodes in the UV range

2014

We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.

Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology

2013

In this work, we investigate the spectral response of metal-oxide- semiconductor photodetectors based on Ge nanoclusters (NCs) embedded in a silicon dioxide (SiO2) matrix. The role of Ge NC size and density on the spectral response was evaluated by comparing the performance of PDs based on either densely packed arrays of 2 nm-diameter NCs or a more sparse array of 8 nm-diameter Ge NCs. Our Ge NC photodetectors exhibit a high spectral responsivity in the 500-1000 nm range with internal quantum efficiency of ~ 700% at - 10 V, and with NC array parameters such as NC density and size playing a crucial role in the photoconductive gain and response time. We find that the configuration with a more…

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave

2012

N-on-P and P-on-N Silicon Photomultipliers: Responsivity comparison in the continuous wave regime

2013

We report on the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type and Ntype substrate respectively. A physical explanation of the experimental results is provided.

Measurements of Silicon Photomultipliers Responsivity

2012

We present some results on the optical characterization of Silicon Photomultipliers designed for medical imaging applications. In particular we will discuss our responsivity measurements performed with very low incident optical power and on a broad spectrum

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

2013

We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.

Electro-optical characterization of new classes of Silicon Carbide UV photodetectors

2014

In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in $\hbox{Ni}_{2}\hbox{Si}$ . These devices exploit the pinch-off surface effect. $I$ – $V$ and $C$ – $V$ characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10- $\mu\hbox{m}$ pitch class demonstrates …

First-in-man permanent laparoscopic fixation free obliteration of inguinal hernia defect with the 3D dynamic responsive implant ProFlor-E®. Case repo…

2020

Abstract Introduction In the case of inguinal hernia recurrence after primary anterior repair, international guidelines strongly suggest a posterior laparoscopic approach. The 3D dynamic-responsive prosthesis for inguinal hernia repair ProFlor-E® has recently been introduced to the market. The present report describes the results of the first-in-man laparoscopic inguinal hernia repair carried out with ProFlor-E®. Presentation of case A 71-year-old male Caucasian presented with recurrent inguinal hernia after primary anterior repair. A fixation free TAPP procedure with ProFlor-E® was planned. Implant delivery and placement to obliterate the defect was quick and safe. Postoperatively, startin…

Parental Competence in Infant and Primary Education: design and validation of an instrument

2021

Actualmente, la familia se encuentra ante retos que requieren de su eficiencia y eficacia en la crianza, protección y orientación de los hijos, es decir, la parentalidad y la capacidad de los padres de ejercerla de forma competente. Desde este punto de vista, destaca la necesidad de un modelo educativo centrado en el desarrollo de las competencias parentales que proporcione conocimientos, habilidades y actitudes que optimicen el rol parental respecto al desarrollo pleno y sistémico del ser humano. Ante la necesidad de conocer si los padres asumen de forma óptima su papel en la educación de sus hijos, se plantea como objetivo principal de este artículo el diseño de un instrumento para el aná…

P-on-N and N-on-P silicon photomultipliers: responsivity comparison in the continuous wave regime

2013

We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observed when the reverse b…